Comparison of the high-frequency performance of staggered and coplanar organic thin-film transistors using two-port network analysis

James W. Borchert; Ute Zschieschang; Florian Letzkus; Michele Giorgio; R. Thomas Weitz; Mario Caironi; Joachim N. Burghartz; Sabine Ludwigs; Hagen Klauk

doi:10.1117/12.2567978

20 August 2020 Comparison of the high-frequency performance of staggered and coplanar organic thin-film transistors using two-port network analysis

James W. Borchert, Ute Zschieschang, Florian Letzkus, Michele Giorgio, R. Thomas Weitz, Mario Caironi, Joachim N. Burghartz, Sabine Ludwigs, Hagen Klauk

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Proceedings Volume 11476, Organic and Hybrid Field-Effect Transistors XIX; 114760U (2020) https://doi.org/10.1117/12.2567978
Event: SPIE Organic Photonics + Electronics, 2020, Online Only

Abstract

The choice of a staggered or coplanar geometry for organic thin-film transistors (TFT) has significant effects on the static and dynamic electronic properties of the transistors. Using two-port network analysis, we find that the parasitic capacitances and thus the unity current-gain (transit) frequencies are significantly more dependent on the gate-to-source overlap in the staggered TFTs than in coplanar TFTs, and that the transit frequency is higher overall when a coplanar geometry is implemented. We show that these differences are primarily attributed to the lower contact resistance in the coplanar TFTs (10 Ohm-cm) as well as smaller parasitic capacitances associated with the gate-to-contact overlaps.

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James W. Borchert, Ute Zschieschang, Florian Letzkus, Michele Giorgio, R. Thomas Weitz, Mario Caironi, Joachim N. Burghartz, Sabine Ludwigs, and Hagen Klauk "Comparison of the high-frequency performance of staggered and coplanar organic thin-film transistors using two-port network analysis", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 114760U (20 August 2020); https://doi.org/10.1117/12.2567978

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