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20 September 2020 High sensitivity non-CAR type hemicellulose resists for EUV Lithography
Kazuyo Morita, Kimiko Yamamoto, Yasuaki Tanaka, Hiroki Tanaka, Masahiko Harumoto, Yuji Tanaka, Chisayo Mori, You Arisawa, Tomohiro Motono, Harold Stokes, Masaya Asai
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Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 115170E (2020) https://doi.org/10.1117/12.2572769
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only
Abstract
This paper described a higher sensitivity non-CAR type hemicellulose resist and the effect of hemicellulose content and polymer structure for EUV lithography. Hemicellulose content and the resist structure are the keys of EUV sensitivity. The line width 14 nm L/S pattern by EUV lithography was successfully obtained. Other 2types of resist were developed for higher sensitivity of EUV lithography. The results will be reported and confirmed the effect of hemicellulose content and resist structure. Non-CAR type hemicellulose resist is one of the candidates for next generation EUV lithography resist.
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Kazuyo Morita, Kimiko Yamamoto, Yasuaki Tanaka, Hiroki Tanaka, Masahiko Harumoto, Yuji Tanaka, Chisayo Mori, You Arisawa, Tomohiro Motono, Harold Stokes, and Masaya Asai "High sensitivity non-CAR type hemicellulose resists for EUV Lithography", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170E (20 September 2020); https://doi.org/10.1117/12.2572769
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KEYWORDS
Extreme ultraviolet lithography
Lithography
Extreme ultraviolet
Photoresist processing
Polymers
Process control
Semiconducting wafers
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