Image blur investigation using EUV-interference lithography

T. Allenet; J. G. Santaclara; G. Rispens; B. Geh; Y. Ekinci

doi:10.1117/12.2573126

30 November 2020 Image blur investigation using EUV-interference lithography

T. Allenet, J. G. Santaclara, G. Rispens, B. Geh, Y. Ekinci

Author Affiliations +

Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 115170J (2020) https://doi.org/10.1117/12.2573126
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

As EUV lithography moves into mass production, photoresist development continues to be one of the most prominent challenges to reach higher resolutions. This work aims to address the resist performance limitations with regards to image blur. Feature quality is a result of the aerial image and the response function of the resist. The contrast of the aerial image is reduced by the exposure tool (optical aberrations and mechanical stability) and the resist (chemical mechanisms and development). Decoupling these two contributions would be highly valuable information to assist in resist development. Here, we investigate the through-pitch behavior of image contrast to determine and de-correlate the limitations of the resist and the exposure process. The method used here is based on the experimental analysis of the through-pitch behaviors of CD and LWR in dense lines/space patterns using EUV interference lithography.

Conference Presentation

Citation Download Citation

T. Allenet, J. G. Santaclara, G. Rispens, B. Geh, and Y. Ekinci "Image blur investigation using EUV-interference lithography", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170J (30 November 2020); https://doi.org/10.1117/12.2573126

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