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20 September 2020 Characterizing Variation in EUV Contact Hole Lithography
Chris A. Mack, Gian Lorusso, Danilo De Simone, Joren Severi
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Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 115170K (2020) https://doi.org/10.1117/12.2572834
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only
Abstract
Local critical dimension uniformity (LCDU) for contact holes may be correlated with stochastic defects (missing or merged holes), but metrology noise will bias the LCDU measured by a CD-SEM. In this work, large contact hole data sets will be collected with varying SEM measurement recipes, such as different numbers of frames of averaging. Additionally, multiple measurements of the same after-etch features will be used to quantify the impact of metrology noise on the biasing of measured LCDU. Finally, a recommendation will be made as to an approach that minimizes, or eliminates, bias in LCDU measurements.
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Chris A. Mack, Gian Lorusso, Danilo De Simone, and Joren Severi "Characterizing Variation in EUV Contact Hole Lithography", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170K (20 September 2020); https://doi.org/10.1117/12.2572834
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KEYWORDS
Stochastic processes
Extreme ultraviolet
Extreme ultraviolet lithography
Edge detection
Critical dimension metrology
Lithography
Scanning electron microscopy
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