Stochastic printing behavior of non-local mask deficiencies in EUV lithography

Rik Jonckheere; Lawrence S. Melvin III

doi:10.1117/12.2572998

28 December 2020 Stochastic printing behavior of non-local mask deficiencies in EUV lithography

Rik Jonckheere, Lawrence S. Melvin III

Author Affiliations +

Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 1151710 (2020) https://doi.org/10.1117/12.2572998
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

This paper extends the 2019 findings, that local defects on an EUV mask are trigger points for stochastic failures on the printed wafer, to a simulation study of non-local mask deficiencies. These relate to shortcomings of a larger area nature where the reticle deviates from an ideal reticle or fails specification. These include aspects such as global CD error, absorber slope, contamination effects, line edge roughness, and multilayer roughness. The presented results suggest that mask specifications may need refinement, specifically for roughness type deficiencies, in order to help mitigate the mask contribution in the stochastics of wafer printing by EUV lithography.

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Citation Download Citation

Rik Jonckheere and Lawrence S. Melvin III "Stochastic printing behavior of non-local mask deficiencies in EUV lithography", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 1151710 (28 December 2020); https://doi.org/10.1117/12.2572998

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