High-NA EUV lithography exposure tool: advantages and program progress

Jan Van Schoot; Sjoerd Lok; Eelco van Setten; Ruben Maas; Kars Troost; Rudy Peeters; Jo Finders; Judon Stoeldraijer; Jos Benschop; Paul Graeupner; Peter Kuerz; Winfried Kaiser

doi:10.1117/12.2572932

7 January 2021 High-NA EUV lithography exposure tool: advantages and program progress

Jan Van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Winfried Kaiser

Author Affiliations +

Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 1151712 (2021) https://doi.org/10.1117/12.2572932
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are entering high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The intent of this high-NA scanner, targeting a resolution of 8nm, is to extend Moore’s law throughout the next decade. The high-NA optical system, together with the developments in mask and resist, provides an increased contrast, key to control stochastic contributions to EPE and the rate of printing defects. A novel lens design, capable of providing the required NA, has been identified; this lens will be paired with new, faster stages and more accurate sensors enabling the tight focus and overlay control needed for future process nodes. Impact on system architecture and proposed solutions are described in this paper. In addition, we give a status update on the developments at ZEISS and ASML.

Conference Presentation

Citation Download Citation

Jan Van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, and Winfried Kaiser "High-NA EUV lithography exposure tool: advantages and program progress", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 1151712 (7 January 2021); https://doi.org/10.1117/12.2572932

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE