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16 October 2020 Experimental verification of high-NA imaging simulations using SHARP
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Abstract
The next-generation high-NA EUV scanner is being developed to enable patterning beyond the 3-nm technology node. Design and development of the scanner are based on rigorous litho-simulations. It is important to verify key imaging simulation findings by means of aerial image experiments with representative high-NA scanner characteristics. The first ASML-SHARP joint experiment was done with lines and spaces with pitches down to 16 nm wafer scale (1x). The experimental results confirmed the key litho-simulation findings: central obscuration’s impact on high-NA imaging and mitigations of obscuration’s impact using flex illuminations.
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© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Natalia Davydova, Fei Liu, Markus Benk, Eelco van Setten, Gerardo Bottiglieri, Anton van Oosten, John McNamara, Vincent Wiaux, Joern-Holger Franke, Kenneth Goldberg, DS Nam, Joseph Zekry, Patrick Naulleau, Timon Fliervoet, and Rene Carpaij "Experimental verification of high-NA imaging simulations using SHARP", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 1151714 (16 October 2020); https://doi.org/10.1117/12.2572846
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