Tomorrow’s pitches on today’s 0.33 NA scanner: pupil and imaging conditions to print P24 L/S and P28 contact holes

Joern-Holger Franke; Natalia Davydova; Joost Bekaert; Vincent Wiaux; Vineet Vijayakrishnan Nair; Andre van Dijk; Erik Wang; Mark Maslow; Eric Hendrickx

doi:10.1117/12.2573073

4 January 2021 Tomorrow’s pitches on today’s 0.33 NA scanner: pupil and imaging conditions to print P24 L/S and P28 contact holes

Joern-Holger Franke, Natalia Davydova, Joost Bekaert, Vincent Wiaux, Vineet Vijayakrishnan Nair, Andre van Dijk, Erik Wang, Mark Maslow, Eric Hendrickx

Author Affiliations +

Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 1151716 (2021) https://doi.org/10.1117/12.2573073
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

We demonstrate P24 line/space and P28 contact hole printing on wafer using a NXE:3400B EUV scanner. The goal is to enable ecosystem development towards high-NA in a Fab-like environment. We allow for pupil fill ratios down to 6% (illumination efficiency ~35%) and use fading correction by induced lens aberrations. We show that the dose sensitivity for P24 L/S can be improved by more than 30% compared to a standard (leaf-shaped dipole) pupil. For contact holes, both single expose and double L/S expose schemes print contact holes at pitch 28nm in metal oxide resist (NTD), albeit at very different dose.

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Joern-Holger Franke, Natalia Davydova, Joost Bekaert, Vincent Wiaux, Vineet Vijayakrishnan Nair, Andre van Dijk, Erik Wang, Mark Maslow, and Eric Hendrickx "Tomorrow’s pitches on today’s 0.33 NA scanner: pupil and imaging conditions to print P24 L/S and P28 contact holes", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 1151716 (4 January 2021); https://doi.org/10.1117/12.2573073

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