Analysis and mitigation of forbidden pitch effects for EUV lithography

Ling Ma; Lisong Dong; Taian Fan; Xiaojing Su; Jianfang He; Ruixuan Wu; Yumei Zhou; Yayi Wei

doi:10.1117/12.2573145

20 September 2020 Analysis and mitigation of forbidden pitch effects for EUV lithography

Ling Ma, Lisong Dong, Taian Fan, Xiaojing Su, Jianfang He, Ruixuan Wu, Yumei Zhou, Yayi Wei

Author Affiliations +

Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 115171B (2020) https://doi.org/10.1117/12.2573145
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Conference Poster

Abstract

Features in forbidden pitch have limited exposure latitude and depth of focus in lithography exposure. This paper provides an analysis of forbidden pitch in extreme ultraviolet lithography (EUVL) from the perspective of rigorous simulation and source mask optimization (SMO). In the stage of rigorous simulation, S-litho is used to analyze the normalized image log slope (NILS) of test patterns from different critical layer in 5nm node. Then the process windows of these test patterns are simulated and compared by the lithography simulator Proteus WorkBench. From the result analysis, the forbidden pitches of critical layer in 5nm node are summarized. In addition, the strategy of mitigating the negative effect of forbidden pitch is proposed with the help of computational lithography.

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Ling Ma, Lisong Dong, Taian Fan, Xiaojing Su, Jianfang He, Ruixuan Wu, Yumei Zhou, and Yayi Wei "Analysis and mitigation of forbidden pitch effects for EUV lithography", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115171B (20 September 2020); https://doi.org/10.1117/12.2573145

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