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This paper covers the writing performance of our multi-beam mask writer, MBM-1000, which has been developed for the 5 nm technology node. It exposes low sensitivity resist faster than VSB writers and prints complex patterns with better fidelity. We will describe its writing performance and compare it with our VSB writer, EBM-9500 PLUS. MBM-1000 has pixel-level dose correction (PLDC). PLDC modulates dose profile at pixel level to improve pattern fidelity and patterning resolution. It is integrated with MBM-1000 data path and runs inline. We will also report functions and writing results of MBM-1000 with PLDC.
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