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EUV phase shifting masks may be introduced at the N3 node as alternative to double patterning or high-NA exposures. To be advantageous, phase shifting masks may have to come with phase different than 180° and high transmission. The main concern is how such exposures could be affected by stochastic side-lobe printing. In this paper, we present a simulation study where we compare stochastic distributions for contact layers with different mask approaches: binary mask, phase shifting mask with and without assist features, and TriTone masks. The purpose of this work is to evaluate whether phase shifting masks in EUV lithography may become a valuable option to further extend single exposure EUV at NA = 0.33.
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Anatoly Burov, Alessandro Vaglio Pret, Stewart A. Robertson, Patrick Lee, "Stochastic side-lobe printing in EUV lithography: a simulation study," Proc. SPIE 11518, Photomask Technology 2020, 115180Y (16 October 2020); https://doi.org/10.1117/12.2573261