GaN/AlGaN avalanche photodiode detector technology for high performance ultraviolet sensing applications

Ashok K. Sood; John W. Zeller; Parminder Ghuman; Sachidananda Babu; Russell D. Dupuis

doi:10.1117/12.2573387

20 September 2020 GaN/AlGaN avalanche photodiode detector technology for high performance ultraviolet sensing applications

Ashok K. Sood, John W. Zeller, Parminder Ghuman, Sachidananda Babu, Russell D. Dupuis

Author Affiliations +

Proceedings Volume 11530, Sensors, Systems, and Next-Generation Satellites XXIV; 115300Q (2020) https://doi.org/10.1117/12.2573387
Event: SPIE Remote Sensing, 2020, Online Only

Abstract

Detection of ultraviolet (UV) bands offers increased spatial resolution, small pixel sizes, and large format arrays, thus benefitting a variety of NASA, defense, and commercial applications. Al_xGa_1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single-photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current and jitter under high electric fields. Optical gains of 5×10⁶ and greater with enhanced quantum efficiencies over the 320-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. We are additionally using device technology developed for high voltage GaN p-i-n rectifier devices to enable advanced Geiger-mode UVAPDs with single-photon counting capability. This technology provides extremely low leakage currents in the reverse bias range near avalanche breakdown, a necessary requirement for stable Geiger-mode operation. The variable-area GaN/AlGaN UV-APD detectors and arrays being developed enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

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Ashok K. Sood, John W. Zeller, Parminder Ghuman, Sachidananda Babu, and Russell D. Dupuis "GaN/AlGaN avalanche photodiode detector technology for high performance ultraviolet sensing applications", Proc. SPIE 11530, Sensors, Systems, and Next-Generation Satellites XXIV, 115300Q (20 September 2020); https://doi.org/10.1117/12.2573387

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KEYWORDS

Ultraviolet radiation

Avalanche photodiodes

Sensors

Defense technologies

Earth sciences

Gallium nitride

Metalorganic chemical vapor deposition

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