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20 September 2020 3.6 μm Quantum Cascade Laser based on low-interface-scattering active region design
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Abstract
We discuss a solution to the dilemma of high confinement energy and the high interface-scattering rate for the high-barrier InGaAs-InAlAs-AlAs QCLs, operating at wavelengths substantially shorter than 4 µm. The new design includes fewer quantum wells within a single cascade and operates at 3.6 µm. Otherwise, its performance is very similar to the best of recently-shown QCLs at 4.6 µm and 4.0 µm using the same material system.
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Mykhaylo P. Semtsiv and William Ted Masselink "3.6 μm Quantum Cascade Laser based on low-interface-scattering active region design", Proc. SPIE 11539, Technologies for Optical Countermeasures XVII; and High-Power Lasers: Technology and Systems, Platforms, Effects IV, 1153904 (20 September 2020); https://doi.org/10.1117/12.2582114
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