Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Xin Yi; Shiyu Xie; Baolai Liang; Leh W. Lim; Diana L. Huffaker; Chee H. Tan; John P. R. David

doi:10.1117/12.2573766

13 October 2020 Extremely low-noise avalanche photodiodes based on AlAs_0.56Sb_0.44

Xin Yi, Shiyu Xie, Baolai Liang, Leh W. Lim, Diana L. Huffaker, Chee H. Tan, John P. R. David

Proceedings Volume 11540, Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III; 115400M (2020) https://doi.org/10.1117/12.2573766
Event: SPIE Security + Defence, 2020, Online Only

Abstract

This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs_0.56Sb_0.44 p-i-n and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6 -1.5 μm. From these, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric field range of 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. Excess noise characteristics suggest an β/α ratio as low as 0.005 for an avalanche region of 1.5 μm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of -32.1 dBm at a bit-error rate (BER) of 1×10^-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

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Xin Yi, Shiyu Xie, Baolai Liang, Leh W. Lim, Diana L. Huffaker, Chee H. Tan, and John P. R. David "Extremely low-noise avalanche photodiodes based on AlAs_0.56Sb_0.44", Proc. SPIE 11540, Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, 115400M (13 October 2020); https://doi.org/10.1117/12.2573766

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