Strain-enhanced Ge epitaxial layer on Si-on-quartz wafer for near-infrared photonic devices

Asahi Degawa; Moïse Sotto; Yasuhiko Ishikawa

doi:10.1117/12.2575522

10 October 2020 Strain-enhanced Ge epitaxial layer on Si-on-quartz wafer for near-infrared photonic devices

Asahi Degawa, Moïse Sotto, Yasuhiko Ishikawa

Proceedings Volume 11556, Nanophotonics and Micro/Nano Optics VI; 1155603 (2020) https://doi.org/10.1117/12.2575522
Event: SPIE/COS Photonics Asia, 2020, Online Only

Abstract

Ge epitaxial layer is grown on a bonded Si-on-quartz (SOQ) wafer by ultrahigh vacuum chemical vapor deposition. A tensile strain as large as 0.4% is generated in Ge grown on SOQ, which is almost two times larger than ~0.2% in Ge grown on an ordinary Si-on-insulator (SOI) wafer. The enhancement of tensile strain is derived from an increased thermal expansion mismatch between the Ge layer and the base substrate of quartz in SOQ, whose thermal expansion coefficient of 0.5 × 10^-6 K^-1 is smaller than 2.6 × 10^-6 K^-1 for Si base substrate in SOI. Because of the strain-induced bandgap narrowing, the direct bandgap energy is reduced from ~0.77 eV for Ge on SOI to ~0.75 eV for Ge on SOQ. Performances are discussed when the strain-enhanced Ge layer on SOQ is applied to near-infrared photonic devices of photodetectors and light emitters.

Conference Presentation

Citation Download Citation

Asahi Degawa, Moïse Sotto, and Yasuhiko Ishikawa "Strain-enhanced Ge epitaxial layer on Si-on-quartz wafer for near-infrared photonic devices", Proc. SPIE 11556, Nanophotonics and Micro/Nano Optics VI, 1155603 (10 October 2020); https://doi.org/10.1117/12.2575522

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