Two-dimensional (2D)-material-based photodetectors have recently received great attention due to their potential as ultrathin and ultra-highly integrated devices. In this study, we demonstrated the application of MoTe2 as electrode material for photodetectors. An all-2D photodetector based on WS2 and MoTe2 is fabricated. Owing to the large Schottky barrier formed between WS2 and MoTe2, the avalanche effect can be realized because a large electrical field can be applied across the MoTe2–WS2–MoTe2 junctions before breakdown. Additionally, because of the existence of Schottky barrier, the dark current of device is greatly reduced. As a result, we achieved the enhanced performance of the ultrathin all-2D photodetector, with a photoresponsivity of 6.02 AW-1, an external quantum efficiency of 1406%, an avalanche gain of 587, and a low dark current of 93 pA in the broadband spectrum range from visible-to-NIR wavelengths.
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