High power Al-free CW 808nm laser diode bar

Fan Yang; Gangming Liu; Cunxue Wu; Zhiwan Yan

doi:10.1117/12.2581281

5 November 2020 High power Al-free CW 808nm laser diode bar

Fan Yang, Gangming Liu, Cunxue Wu, Zhiwan Yan

Proceedings Volume 11562, AOPC 2020: Advanced Laser Technology and Application; 115621C (2020) https://doi.org/10.1117/12.2581281
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

808nm laser is widely used in solid-state laser pump source, information technology, military field, like laser weapon. The main problem of high power CW laser is the high working temperature caused by low photoelectric efficiency. There are two ideas to solve this problem: one is optimizing the package structure, to make huge energy be eliminated by water or others; the other is optimizing the structure of chip, to improve the photoelectric conversion efficiency, minimize the voltage and reduce the heat producing finally. This article mainly concentrates on how to adjust the structure of active layer, waveguide layer and gradient layer. The target of those adjustments is producing 2mm and 3mm cavity length chip which can work at 210A and emit light more than 200W.

Citation Download Citation

Fan Yang, Gangming Liu, Cunxue Wu, and Zhiwan Yan "High power Al-free CW 808nm laser diode bar", Proc. SPIE 11562, AOPC 2020: Advanced Laser Technology and Application, 115621C (5 November 2020); https://doi.org/10.1117/12.2581281

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