Development of a new indium bump fabrication method for large-area HgCdTe detector

Yi Zhang; Junfeng Niu; Peng Zhang; Zhen Tan

doi:10.1117/12.2579472

5 November 2020 Development of a new indium bump fabrication method for large-area HgCdTe detector

Yi Zhang, Junfeng Niu, Peng Zhang, Zhen Tan

Proceedings Volume 11563, AOPC 2020: Infrared Device and Infrared Technology; 1156308 (2020) https://doi.org/10.1117/12.2579472
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

Indium bumps are widely employed in high density interconnection between infrared focal plane arrays and Si read out integrated circuits by flip-chip bonding. Indium bump array formation is a critical step in the flip-chip fabrication process. Taller and higher uniformity indium bumps are necessary for high pixel density and low noise photodetectors. In this work, a new process of indium bumping through evaporation and ion etching was developed to produce ultrafine pitch indium bumps for assembly of large-area HgCdTe photodetector. Electron microscopy was used to analyze and evaluate the microstructure, height and uniformity of indium bumps. The results showed 7 μm height indium bumps with 10 μm pitch were easily achieved. The bump height and uniformity were significantly improved with our new developed indium bump fabrication method.

Citation Download Citation

Yi Zhang, Junfeng Niu, Peng Zhang, and Zhen Tan "Development of a new indium bump fabrication method for large-area HgCdTe detector", Proc. SPIE 11563, AOPC 2020: Infrared Device and Infrared Technology, 1156308 (5 November 2020); https://doi.org/10.1117/12.2579472

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