A promising low noise and high gain InGaAs/Si avalanche photodiode

Hongling Peng; Hongwei Qu; Wanhua Zheng

doi:10.1117/12.2579756

5 November 2020 A promising low noise and high gain InGaAs/Si avalanche photodiode

Hongling Peng, Hongwei Qu, Wanhua Zheng

Proceedings Volume 11564, AOPC 2020: Optoelectronics and Nanophotonics; and Quantum Information Technology; 1156407 (2020) https://doi.org/10.1117/12.2579756
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

In this paper, the direct bonding InGaAs/Si avalanche photodiode (APD) with certain gain is developed. This structure separates the optical absorption region (InGaAs) from the multiplication region (Si). Avalanche multiplication takes place in the Si layer after the carriers injected from the absorption region. InGaAs and Si wafer are connected together by wafer bonding technology. The interface quality of InGaAs / Si material is good through optimizing the physical and chemical cleaning methods and bonding conditions of InGaAs/InP and Si epitaxial wafers. The InGaAs / Si APD is fabricated by conventional semiconductor process. The gain of InGaAs / Si APD is 43 at 38V. Further optimization of the process can obtain lower dark current and higher gain bandwidth product. This kind of device can be used for long-distance optical fiber communication.

Citation Download Citation

Hongling Peng, Hongwei Qu, and Wanhua Zheng "A promising low noise and high gain InGaAs/Si avalanche photodiode", Proc. SPIE 11564, AOPC 2020: Optoelectronics and Nanophotonics; and Quantum Information Technology, 1156407 (5 November 2020); https://doi.org/10.1117/12.2579756

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