Development Of JFET Amplified InSb Infrared Detector Array For Use At Liquid Helium Temperature

K. Yamamoto; H. Fujisada; T. Matsumoto; H. Murakami

doi:10.1117/12.978612

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8 January 1990 Development Of JFET Amplified InSb Infrared Detector Array For Use At Liquid Helium Temperature

K. Yamamoto, H. Fujisada, T. Matsumoto, H. Murakami

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Proceedings Volume 1157, Infrared Technology XV; (1990) https://doi.org/10.1117/12.978612
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

For astronomical observation in space, we have developed a JFET amplified InSb infrared detector array which can be operated at liquid helium temperature. This detector array uses 24- channel InSb photodiodes, 1 mm x 0.5 mm per element, having low junction capacitance for reducing noise. The JFET amplifier circuit is designed as a hybrid IC containing a 24-channel charge integration amplifier (CIA) array. Since the JFET amplifier circuit cannot operate at liquid helium temperature, it is suspended from the frame using aramid wires and warmed up to about 70 K by a built-in heater. We have evaluated this JFET amplified InSb infrared detector array and obtained good results with readout noise of about 100e . It was confirmed that this noise level is low enough for use in astronomical observation in space.

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K. Yamamoto, H. Fujisada, T. Matsumoto, and H. Murakami "Development Of JFET Amplified InSb Infrared Detector Array For Use At Liquid Helium Temperature", Proc. SPIE 1157, Infrared Technology XV, (8 January 1990); https://doi.org/10.1117/12.978612

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