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8 January 1990 Initial Characterization Of A New 64 X 64 Multiplexed InSb FPA
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Abstract
Preliminary evaluation of the performance characteristics of a new two-dimensional multiplexed MWIR focal plane array assembly is discussed. The CMOS BDRO multiplexer individually buffers each detector in the 64 x 64 element array. This multiplexer was designed with an emphasis on low-background applications and results will be reported accordingly. The detector is an array of photovoltaic indium antimonide (InSb) diodes bump bonded, using indium columns, to the silicon multiplexer and is thinned for back-side illumination. The detector element size is 87 x 87 microns on 100 micron centers. Charge storage capacity is approximately 4 x 106 electrons. The InSb array substrate is thinned to approximately 15 microns and spectrally responsive in the 1 to 5.5 μm region. Electro-optical test results include the performance parameters: quantum efficiency, signal linearity, and dark current. IR images will be presented to illustrate initial array performance.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. A. Niblack, H. A. Timlin, C. J. Martin, R. C. Fischer, C. Walmsley, and C. Steele "Initial Characterization Of A New 64 X 64 Multiplexed InSb FPA", Proc. SPIE 1157, Infrared Technology XV, (8 January 1990); https://doi.org/10.1117/12.978588
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