Mid-IR laser sources monolithically integrated on Si substrates

Eric Tournié; Marta Rio Calvo; Laura Monge-Bartolome; Zeineb Loghmari; Daniel A Diaz-Thomas; Guilhem Boissier; Ariane Meguekam-Sado; Michaël Bahriz; Roland Teissier; Alexei N Baranov; Laurent Cerutti; Jean-Baptiste Rodriguez

doi:10.1117/12.2584548

4 October 2020 Mid-IR laser sources monolithically integrated on Si substrates

Eric Tournié, Marta Rio Calvo, Laura Monge-Bartolome, Zeineb Loghmari, Daniel A Diaz-Thomas, Guilhem Boissier, Ariane Meguekam-Sado, Michaël Bahriz, Roland Teissier, Alexei N Baranov, Laurent Cerutti, Jean-Baptiste Rodriguez

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Proceedings Volume 11577, Emerging Applications in Silicon Photonics; 1157707 (2020) https://doi.org/10.1117/12.2584548
Event: SPIE Photonex and Vacuum Expo, 2020, Online Only

Abstract

The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on GaSb-based laser diodes (LDs) and InAs/AlSb quantum-cascade lasers (QCLs), grown on on-axis (001) Si substrates by molecular-beam epitaxy, and covering emission wavelengths from 2 to 10 µm. Threshold current densities well below 1 kA.cm-2 are achieved in both cases. Ridge LDs operate cw up to 80 °C and emit around 10 mW at room temperature whereas QCLs exhibit performances comparable to their counterpart grown on native InAs substrates. In addition, we will demonstrate that etching facets is a viable route toward cavity definition.

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Eric Tournié, Marta Rio Calvo, Laura Monge-Bartolome, Zeineb Loghmari, Daniel A Diaz-Thomas, Guilhem Boissier, Ariane Meguekam-Sado, Michaël Bahriz, Roland Teissier, Alexei N Baranov, Laurent Cerutti, and Jean-Baptiste Rodriguez "Mid-IR laser sources monolithically integrated on Si substrates", Proc. SPIE 11577, Emerging Applications in Silicon Photonics, 1157707 (4 October 2020); https://doi.org/10.1117/12.2584548

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