Open Pinned-Phase CCD Technology

James Janesick

doi:10.1117/12.962594

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27 November 1989 Open Pinned-Phase CCD Technology

James Janesick

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Proceedings Volume 1159, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy and Atomic Physics; (1989) https://doi.org/10.1117/12.962594
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Multi-phase CCDs have traditionally exhibited very poor sensitivity in the UV, EUV and soft x-ray due to the absorbing polysilicon layers associated with the technology. To bypass the problem, CCD manufacturers have been forced to either thin and back illuminate the sensor or deposit UV sensitive organic phosphor coatings. Virtual-phase technology however has resolved the frontside QE dilemma by leaving half of the pixel "open" by employing a "virtual electrode" allowing photons to enter into the photosensitive bulk silicon unimpeded. Unfortunately, unlike multi-phase CCDs, virtual-phase detectors typically have limited usage in low signal-level applications because of CTE and readout noise impediments. To circumvent these problem areas, a novel CCD technology referred to as open pinned-phase (OPP) was invented, the subject of this paper. Discussion includes design and process features of an OPP-CCD that are focused to unite multi- and virtual phase technologies. The new CCD promises to deliver high frontside sensitivity in conjunction with ultra-low signal level performance.

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James Janesick "Open Pinned-Phase CCD Technology", Proc. SPIE 1159, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy and Atomic Physics, (27 November 1989); https://doi.org/10.1117/12.962594

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