Paper
28 July 1989 Microfabrication Technologies Applied To The Production Of Large Area Stress Relieved Multilayer Beamsplitters
C. Khan Malek, A. Madouri, R. Rivoira, J. Susini, M. Ouahabi, F. R. Ladan, Y. Lepetre, R. Barchewitz
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Abstract
Large area multilayer beamsplitters (1 cm2 ) were produced for use at oblique incidence in the soft X-ray range. Mo/C multilayer reflectors were deposited on top of a self supporting silicon carbide carrier film. The role of the supporting film and the stress induced by the multilayer are addressed. Progress towards optimization of the flatness and transmission enhancement of the beamsplitters (thinning of the carrier layer and adjusting its stress through etching ) is presented. Experimental reflectivity and transmission results at 13.3 Å are compared with theory.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Khan Malek, A. Madouri, R. Rivoira, J. Susini, M. Ouahabi, F. R. Ladan, Y. Lepetre, and R. Barchewitz "Microfabrication Technologies Applied To The Production Of Large Area Stress Relieved Multilayer Beamsplitters", Proc. SPIE 1160, X-Ray/EUV Optics for Astronomy and Microscopy, (28 July 1989); https://doi.org/10.1117/12.962626
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon carbide

Beam splitters

Multilayers

Reflectivity

Semiconducting wafers

Silicon

Transmittance

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