Use Of Raman Spectroscopy In The Characterization Of Soft X-Ray Multilayer Reflectors

Wang Qi; David D. Allred; L. V. Knight; Jesus Gonzalez-Hernandez

doi:10.1117/12.962645

28 July 1989 Use Of Raman Spectroscopy In The Characterization Of Soft X-Ray Multilayer Reflectors

Wang Qi, David D. Allred, L. V. Knight, Jesus Gonzalez-Hernandez

Proceedings Volume 1160, X-Ray/EUV Optics for Astronomy and Microscopy; (1989) https://doi.org/10.1117/12.962645
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Laser Raman spectroscopy has been found to he useful for characterizing amorphous semi-conductor niultilayers especially the interfaces of multilayers. We have extended this technique to the characterization of W/C niultilayers used in soft x-ray optics and ultrathin sputtered carbon films. Unlike the multilayers previously studied which contained only semiconductors and di-electrics, these are semiconductor/metal multilayers. The dominate Raman feature is due to a-C and consists of a broad peak at about 1580 cm-1 (G-peak) and a shoulder at about 1400 cm ^-1 (D-peak). This was deconvoluted with Gaussians to yield two peaks (one at 1570 cm' and the other at 1420 cim 1). Among the multilayer samples peak positions and relative magnitudes changed little. The intensity ratio of the D-peak to G-peak was much larger for multilayer sample, however , than for the single layer pair samples. This may due to different. forms (amorphous or crystalline) of tungsten layer in the samples and indicate the differences in the structure of carbon layers and tor bonding structure at interfaces.

Citation Download Citation

Wang Qi, David D. Allred, L. V. Knight, and Jesus Gonzalez-Hernandez "Use Of Raman Spectroscopy In The Characterization Of Soft X-Ray Multilayer Reflectors", Proc. SPIE 1160, X-Ray/EUV Optics for Astronomy and Microscopy, (28 July 1989); https://doi.org/10.1117/12.962645

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