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22 February 2021 Optical design of EUV attenuated PSM for contact-hole applications
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Abstract
An optical design of EUV attenuated PSM is proposed for contact-hole imaging. LCDU depends on MEEF as well as NILS. If co-optimization of MEEF and NILS is carried out, EUV PSM performs better when the PSM reflectance is higher. In order to make a high-reflectance PSM, the shifter materials should be as transparent as possible. Since the shifter’s thickness variation throughout the mask can cause phase and reflectance variation and thus global CD variation, its thickness should be set where phase and reflectance are least sensitive to such thickness variation. In short, the shifter’s thickness should be determined to maximize PSM performance while ensuring lithography process robustness. Applying PSM so designed leads to a dramatically lower dose-to-size while maintaining LCDU at the same level. Proposed PSM is manufacturable and effective in increasing throughput of EUV lithography.
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© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang-Nam Ahn, Dong-Seok Nam, Nakgeuon Seong, and Anthony Yen "Optical design of EUV attenuated PSM for contact-hole applications", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090D (22 February 2021); https://doi.org/10.1117/12.2583462
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