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Anamorphic mask design is necessary to overcome the geometrical limitation imposed by the reflective geometry used in EUV lithography projection systems and will be used in high-NA EUVL scanners. In this study, we demonstrate the capability of anamorphic imaging using CDI. We created anamorphic EUV masks with programmed defects and inspected it with RESCAN, a lensless microscope dedicated to EUV mask inspection.
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