Presentation + Paper
12 March 2021 Lensless EUV mask inspection for anamorphic patterns
Author Affiliations +
Abstract
Anamorphic mask design is necessary to overcome the geometrical limitation imposed by the reflective geometry used in EUV lithography projection systems and will be used in high-NA EUVL scanners. In this study, we demonstrate the capability of anamorphic imaging using CDI. We created anamorphic EUV masks with programmed defects and inspected it with RESCAN, a lensless microscope dedicated to EUV mask inspection.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Iacopo Mochi, Hyun-Su Kim, Atoosa Dejkameh, Ricarda Nebling, Dimitrios Kazazis, Uldis Locans, Tao Shen, and Yasin Ekinci "Lensless EUV mask inspection for anamorphic patterns", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090M (12 March 2021); https://doi.org/10.1117/12.2584518
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KEYWORDS
Photomasks

Extreme ultraviolet

Inspection

Reticles

Diffraction

Image restoration

Light sources

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