EUV single exposure via patterning at aggressive pitch

Jing Guo; Jennifer Church; Luciana Meli; Anuja de Silva; Martin Burkhardt; Karen Petrillo; Mary Breton; Cody Murray; Lijuan Zou; Allen Gabor; Nelson Felix

doi:10.1117/12.2582563

24 February 2021 EUV single exposure via patterning at aggressive pitch

Jing Guo, Jennifer Church, Luciana Meli, Anuja de Silva, Martin Burkhardt, Karen Petrillo, Mary Breton, Cody Murray, Lijuan Zou, Allen Gabor, Nelson Felix

Author Affiliations +

Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090U (2021) https://doi.org/10.1117/12.2582563
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

As the semiconductor industry continues pushing Moore’s law to the next node, interconnect structures scaling will be a key element to performance improvement of functional devices. However, the requirements for low LCDU and defectivity of these interconnect structures have become more stringent with continuous scaling. In this paper, a fundamental study is conducted to understand the impact of various factors on the patterning of EUV single exposure vias, and to find effective strategies to shrink CD while improving LCDU and defectivity. The work is based on a 40 nm pitch orthogonal via array baseline, and probes different patterning factors including illumination, resist materials, stack, scanner, and develop methods for LCDU improvement and defectivity reduction. The patterns are transferred to bottom dielectrics to study the evolution of LCDU and defectivity during etching.

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Citation Download Citation

Jing Guo, Jennifer Church, Luciana Meli, Anuja de Silva, Martin Burkhardt, Karen Petrillo, Mary Breton, Cody Murray, Lijuan Zou, Allen Gabor, and Nelson Felix "EUV single exposure via patterning at aggressive pitch", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090U (24 February 2021); https://doi.org/10.1117/12.2582563

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