Presentation + Paper
22 February 2021 High voltage scanning electron microscope overlay metrology accuracy for after development inspection
Author Affiliations +
Abstract
We show that an overlay (OVL) metrology system based on a scanning electron microscope can achieve accurate registration of buried and resist (top) structures. The positions were determined by both Back Scattered Electrons (BSE) and Secondary Electrons (SE). The accuracy was quantified for After-Development Inspection (ADI) of an advanced EUVL process. Results by linear tracking showed accuracy below 0.4nm, robust across process variation and target designs. The influence of various measurement conditions, e.g. Field of View, on position and OVL tracking was negligible. The measurement methodology presented is applicable for both standalone High Voltage SEM (HV-SEM) registration targets and optical targets, such as the Advanced Imaging Metrology (AIM®) target used by Imaging Based Overlay (IBO) metrology systems. Using SEM ADI OVL results as a calibration for optical overlay metrology tools we can demonstrate significant improvements in the optical ADI OVL accuracy on small targets like AIM in-die (AIMid).
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Czerkas, N. Gutman, R. Gronheid, E. Gurevich, R. Wang, Y. Feler, M. Zaberchik, Y. Grauer, H. Stoschus, Y. Uziel, U. Pohlmann, and F. Laske "High voltage scanning electron microscope overlay metrology accuracy for after development inspection", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110B (22 February 2021); https://doi.org/10.1117/12.2583710
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KEYWORDS
Overlay metrology

Scanning electron microscopy

Electron microscopes

Inspection

Imaging metrology

Integrated optics

Metrology

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