High volume manufacturing metrology needs at and beyond the 5 nm node

Benjamin D. Bunday; Ndubuisi G Orji; John A Allgair

doi:10.1117/12.2584555

22 February 2021 High volume manufacturing metrology needs at and beyond the 5 nm node

Benjamin D. Bunday, Ndubuisi G Orji, John A Allgair

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 116110F (2021) https://doi.org/10.1117/12.2584555
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

This presentation will examine at a high level the future for in-line high volume manufacturing (HVM) metrology for the semiconductor industry. First, we will take a broad view of the needs of patterned defect, critical dimensional (CD/3D) and films metrology, and present the extensive list of applications for which metrology solutions are needed. Progress will be shown in terms of the IEEE-IRDS roadmap. We will then report on the gating technical limits of the most important of these metrology solutions to address the metrology challenges of future nodes, highlighting key metrology technology gaps requiring industry attention and investment.

Conference Presentation

Citation Download Citation

Benjamin D. Bunday, Ndubuisi G Orji, and John A Allgair "High volume manufacturing metrology needs at and beyond the 5 nm node", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110F (22 February 2021); https://doi.org/10.1117/12.2584555

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