An innovative probe microscopy solution for measuring conductivity profiles in 3-dimensions

U. Celano; K. Paredis; A. D. L. Humphris; M. Tedaldi; C. O'Sullivan; J. P. Hole; J. Goulden

doi:10.1117/12.2583065

22 February 2021 An innovative probe microscopy solution for measuring conductivity profiles in 3-dimensions

U. Celano, K. Paredis, A. D. L. Humphris, M. Tedaldi, C. O'Sullivan, J. P. Hole, J. Goulden

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 116110J (2021) https://doi.org/10.1117/12.2583065
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

The ever-increasing complexity of materials and architectures in nanoelectronics devices has driven the demand for new high-resolution imaging methods. Specifically, for three-dimensional (3D) analysis of confined volumes, atomic force microscopy (AFM) has been recently explored as a method for tomographic sensing. Here, we report on the innovative design of a dedicated microscopy solution for volumetric nanoscale analyses that achieves tomographic AFM by using a novel multi-probe sensing architecture. First, we describe the development of a custom scan head that is based on an exchangeable multi-probe hardware. Second, we demonstrate the use of our machine for tip-induced material removal in thick SiO₂. Finally, we perform a tomographic reconstruction of nanosized poly-Si vertical channels, considered here as a prototypical system for vertical memory cells.

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Citation Download Citation

U. Celano, K. Paredis, A. D. L. Humphris, M. Tedaldi, C. O'Sullivan, J. P. Hole, and J. Goulden "An innovative probe microscopy solution for measuring conductivity profiles in 3-dimensions", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110J (22 February 2021); https://doi.org/10.1117/12.2583065

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