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As the fan out advantage assembly packages of redistribution layer (RDL) line and space develop to more narrow to 2um / 2um, and with deeper structure. The accurate critical dimension (CD) and depth measurement are necessary to monitor process quality. There is the limit of resolution about 0.25um for traditional optical instrument, it is too large to measure narrow line and space in high accuracy. The non-contact wafer form atomic force microscope (AFM) is apply for this application with the high aspect ratio tip. This method has been used to measure isolate and dense RDL pattern includes copper etching and photoresist structure. The accuracy between AFM and focus ion beam (FIB) are less than 0.1um on top and bottom CD of redistribution layer.
Sung-Hua Zhong andLiang-Pin Chen
"AFM line space trench and depth measurement of fan-out fine-pitch high aspect ratio redistribution layer structure", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116112X (22 February 2021); https://doi.org/10.1117/12.2583812
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Sung-Hua Zhong, Liang-Pin Chen, "AFM line space trench and depth measurement of fan-out fine-pitch high aspect ratio redistribution layer structure," Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116112X (22 February 2021); https://doi.org/10.1117/12.2583812