Poster + Paper
22 February 2021 Plasma assisted particle contamination control: plasma charging dependence on particle morphology
Author Affiliations +
Conference Poster
Abstract
With the introduction of EUV lithography, the control of contamination in advanced semiconductor processes has become increasingly critical. Our work is a joint effort (TU/e and VDL-ETG) and is aimed at the development of plasma-assisted contamination control strategies mainly focusing on airborne particles in a low pressure gas. We present experiments comparing the charge-to-mass ratio of single spherical micron-sized particles with that of non-spherical agglomerates thereof in the spatial plasma afterglow. It is shown that the charge-to-mass ratio of two-particle clusters deviates only 6% from that of singlets. This means that for the proposed mitigation strategy, of which the efficiency is based on the charge-to-mass ratio, it is acceptable to study the charging of spherical particles and to extrapolate the results towards non-spherical particles within a reasonable range.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. C. A. van Huijstee, B. van Minderhout, R. M. H. Rompelberg, P. Blom, T. Peijnenburg, and J. Beckers "Plasma assisted particle contamination control: plasma charging dependence on particle morphology", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116113A (22 February 2021); https://doi.org/10.1117/12.2584607
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KEYWORDS
Plasma

Particles

Contamination control

Particle contamination

Contamination

Extreme ultraviolet lithography

Semiconductors

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