CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 11615 > Article
Presentation
22 February 2021 Etch and deposition co-optimization: a pathway to enabling high aspect ratio 3D NAND Flash ONON channel hole patterning
Meihua Shen, John Hoang, Hao Chi, Danna Qian, George Papasouliotis, Jonathan Church, Pramod Subramonium, Eric Hudson, Leonid Belau, Katherine Haynes, Matt Weimer, Ragesh Puthenkovilakam, Sirish Reddy, Sonal Bhadauriya, Thorsten Lill
Author Affiliations +
Proceedings Volume 11615, Advanced Etch Technology and Process Integration for Nanopatterning X; 1161508 (2021) https://doi.org/10.1117/12.2582627
Event: SPIE Advanced Lithography, 2021, Online Only
Abstract
3D NAND flash scaling relies mainly on increasing vertical stack height, thus putting challenges mostly on film deposition and etch. Among various fabrication steps, high aspect ratio (HAR) ONON channel hole etch remains the most critical step. One unique aspect of the 3D NAND process flow is that nitride film in the ONON pair is a sacrificial layer that is been replaced with W at a later stage. The SiN removal process flow provides opportunities to look at possibilities of optimizing oxide and nitride films at different layers to enable better channel hole etch, such as enlarging bottom hole CD, reducing bowing and twisting in the middle area, and etc. In this paper, we will highlight the approaches and benefits on deposition and etch co-optimization as one potential pathway to overcome barrier in HAR ONON channel hole patterning. Besides ONON HAR, hard mask is another key focus. We will also discuss the possible mask material selection consideration based the overall film properties, etch selectivity and final clean/removability perspectives.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Meihua Shen, John Hoang, Hao Chi, Danna Qian, George Papasouliotis, Jonathan Church, Pramod Subramonium, Eric Hudson, Leonid Belau, Katherine Haynes, Matt Weimer, Ragesh Puthenkovilakam, Sirish Reddy, Sonal Bhadauriya, and Thorsten Lill "Etch and deposition co-optimization: a pathway to enabling high aspect ratio 3D NAND Flash ONON channel hole patterning", Proc. SPIE 11615, Advanced Etch Technology and Process Integration for Nanopatterning X, 1161508 (22 February 2021); https://doi.org/10.1117/12.2582627
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Etching
Optical lithography
Photomasks
Data centers
Distortion
Oxides
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top