Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers

A. Boni; S. Arslan; G. Erbert; P. Della Casa; D. Martin; P. Crump

doi:10.1117/12.2578184

5 March 2021 Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers

A. Boni, S. Arslan, G. Erbert, P. Della Casa, D. Martin, P. Crump

Proceedings Volume 11668, High-Power Diode Laser Technology XIX; 1166807 (2021) https://doi.org/10.1117/12.2578184
Event: SPIE LASE, 2021, Online Only

Abstract

GaAs based high power broad area lasers are the most efficient source of optical energy and are used in many industrial applications. Despite considerable improvement in power and efficiency in recent years, further improvement is needed due to the high demand from industry. We review here progress in vertical epitaxial layer design, showing how higher performance is enabled by migrating from asymmetric large optical cavity (ASLOC) designs to the newly developed extreme-triple-asymmetric (ETAS) vertical structure. Building on earlier studies at 940 nm, we focus on gain-guided lasers that have operating wavelength 970 nm, have 90 μm stripe width and 4 mm resonator length. We can emphasize the positive impact of epitaxial layer design, without need for advanced lateral structures. We show how design improvement increases conversion efficiency ηΕ at 12 W output power from 56% to 66%, whilst peak (saturation) power increases from P_opt = 14 to 19 W in continuous wave (CW) mode for p-down single emitters on CuW carriers (thermal resistance 3 K/W). Progress in epitaxial design also leads to smaller lateral beam parameter product (BP Plat) at higher bias, leading to lateral brightness P_opt/BPP_lat < 3 W/mm × mrad. Specifically, in these most recent ETAS structures, by design BPP_lat increases more slowly with self-heating, and this leads directly to lower BPP_lat at high bias. We will also review options for further increased performance, include efforts to understand and improve BPP_lat, which is also limited by a non-thermal ground level BPP₀ (here ∼ 1 mm × mrad).

Conference Presentation

Citation Download Citation

A. Boni, S. Arslan, G. Erbert, P. Della Casa, D. Martin, and P. Crump "Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers", Proc. SPIE 11668, High-Power Diode Laser Technology XIX, 1166807 (5 March 2021); https://doi.org/10.1117/12.2578184

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