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We expose here a new method to map various optoelectronic parameters of solar cells from absolutely calibrated voltage dependent electroluminescence imaging. The absolute calibration is derived from radiometric analysis of the setup coupled to a collection model of the minority carriers on the one hand and to the reciprocity existing between electroluminescence and quantum efficiency of the device on the other hand. The method is illustrated on a classical Al-BSF cast-mono silicon solar cell for which we map with good accuracy the diffusion length, dark recombination current, local voltage and lumped series resistance and analyze the results.
Daniel Ory,Nicolas Paul, andLaurent Lombez
"Quantitative mapping of optoelectronic parameters of solar cell from bias dependent electroluminescence imaging", Proc. SPIE 11681, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X, 116810G (5 March 2021); https://doi.org/10.1117/12.2576891
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Daniel Ory, Nicolas Paul, Laurent Lombez, "Quantitative mapping of optoelectronic parameters of solar cell from bias dependent electroluminescence imaging," Proc. SPIE 11681, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X, 116810G (5 March 2021); https://doi.org/10.1117/12.2576891