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6 March 2021 Exploring AlGaN nanostructures fabricated via chemical wet etching
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Abstract
AlGaN is a leading candidate for current and future ultra-wide bandgap electronic and optoelectronic applications. However, 3D etch technologies for AlGaInN remain immature compared to silicon, limiting its full potential for novel devices. Here, we build from the foundation of anisotropic KOH-based wet etchants used to fabricate GaN structures and explore AlGaN alloys etched in acids and bases. We investigate the etch reactivity of AlGaN alloys as a function of Al content in various etchants. We then explore the etch evolution of novel nanostructures observed and discuss possible mechanistic explanations. Lastly, we look at field emission properties of AlGaN alloys.
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© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Barbara A. Kazanowska, Keshab R. Sapkota, Brendan P. Gunning, Kevin S. Jones, and George T. Wang "Exploring AlGaN nanostructures fabricated via chemical wet etching", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168625 (6 March 2021); https://doi.org/10.1117/12.2582551
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