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5 March 2021 Impact of polarization fields on electrochemical lift-off of GaN membranes
Joachim Ciers, Michael A. Bergmann, Filip Hjort, Jean-François Carlin, Nicolas Grandjean, Åsa Haglund
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860J (2021) https://doi.org/10.1117/12.2578376
Event: SPIE OPTO, 2021, Online Only
Abstract
III-nitride membranes offer novel device designs in photonics, electronics and optomechanics. However, substrate removal often leads to a rough back surface, which degrades device performance. Here, we demonstrate GaN membranes with atomically smooth etched surfaces by electrochemical lift-off, through the implementation of a built-in polarization field in the sacrificial layer. This leads to a faster reduction in the sacrificial layer free carrier density during etching and thus an abrupter etch stop, reducing the root-mean-square roughness down to 0.4 nm over 5×5 µm2. These results open interesting perspectives on high-quality optical cavities and waveguides in the ultraviolet and visible.
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Joachim Ciers, Michael A. Bergmann, Filip Hjort, Jean-François Carlin, Nicolas Grandjean, and Åsa Haglund "Impact of polarization fields on electrochemical lift-off of GaN membranes", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860J (5 March 2021); https://doi.org/10.1117/12.2578376
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KEYWORDS
Polarization
Gallium nitride
Optical resonators
Ultraviolet radiation
Resonators
Surface roughness
Thin film devices
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