Fabrication of high crystalline AlN/sapphire for deep UV-LED

Hideto Miyake; Kenjiro Uesugi; Shiyu Xiao; Kanako Shojiki; Shigeyuki Kuboya

doi:10.1117/12.2585271

5 March 2021 Fabrication of high crystalline AlN/sapphire for deep UV-LED

Hideto Miyake, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860Z (2021) https://doi.org/10.1117/12.2585271
Event: SPIE OPTO, 2021, Online Only

Abstract

For the realization of highly efficient deep-ultraviolet light-emitting diodes (DUV-LEDs) based on III-nitride semiconductors, it is essential to improve the crystalline quality of the AlN templates for crystal growth of AlGaN. Our group has suggested sputtering deposition and post-deposition high-temperature face-to-face annealing (FFA) as a fabrication method of AlN films with low threading dislocation density (TDD) on sapphire substrates. Although the FFA enables reduction of TDDs, it possibly causes a cracking for AlN films due to a large thermal expansion coefficient mismatch between AlN and sapphire. In this work, we controlled the residual stress in AlN films by modifying the sputtering conditions. Consequently, we achieved crack-free AlN films with low TDDs.

Conference Presentation

Citation Download Citation

Hideto Miyake, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, and Shigeyuki Kuboya "Fabrication of high crystalline AlN/sapphire for deep UV-LED", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860Z (5 March 2021); https://doi.org/10.1117/12.2585271

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