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5 March 2021 HfSiOx-gate GaN MOS-HEMTs for RF power transistor
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Abstract
We have investigated AlGaN/GaN high-electron mobility transistors (HEMTs) with a high κ gate dielectric using hafnium silicate (HfSiOx). The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/ decade. In addition, we observed excellent capacitance-voltage (C-V) characteristics with negligible frequency dispersion in the metal-oxide-semiconductor (MOS) HEMT diode. The detailed C-V analysis showed low state densities in the order of 1011 cm-2 eV-1 at the HfSiOx/AlGaN interface.
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Tamotsu Hashizume, Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, and Taketomo Sato "HfSiOx-gate GaN MOS-HEMTs for RF power transistor", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168628 (5 March 2021); https://doi.org/10.1117/12.2577403
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