Split Ga vacancies: abundant defects in beta-Ga2O3

Filip Tuomisto; Antti Karjalainen; Ilja Makkonen

doi:10.1117/12.2585462

5 March 2021 Split Ga vacancies: abundant defects in n-type and semi-insulating β-Ga₂O₃

Filip Tuomisto, Antti Karjalainen, Ilja Makkonen

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 1168709 (2021) https://doi.org/10.1117/12.2585462
Event: SPIE OPTO, 2021, Online Only

Abstract

We have applied positron annihilation spectroscopy to study a wide range of β-Ga₂O₃ bulk crystals and thin films with various doping levels. The Doppler broadening of the 511 keV positron-electron annihilation line exhibits colossal anisotropy compared to other three-dimensional crystalline semiconductors. State-of-the-art theoretical calculations of the positron characteristics in the β-Ga₂O₃ lattice reveal that the positron state is effectively 1-dimensional, giving rise to strong anisotropy. Strongly relaxed split Ga vacancies are found to exhibit even stronger anisotropy and to dominate the positron annihilation signals in almost all experiments. The evidence leads to the conclusion that split Ga vacancies are abundant, with concentration of 10¹⁸ cm^-3 or more, in β-Ga₂O₃ samples irrespective of conductivity.

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Citation Download Citation

Filip Tuomisto, Antti Karjalainen, and Ilja Makkonen "Split Ga vacancies: abundant defects in n-type and semi-insulating β-Ga₂O₃", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 1168709 (5 March 2021); https://doi.org/10.1117/12.2585462

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