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5 March 2021 Fabrication and surface-leakage suppression in (non-polar) m-Zn(Mg)O optoelectronic devices
Borislav Hinkov, Hanh T. Hoang, Daniela Ristanic, Maxime Hugues, Jean-Michel Chauveau, Gottfried Strasser
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Proceedings Volume 11687, Oxide-based Materials and Devices XII; 1168715 (2021) https://doi.org/10.1117/12.2584830
Event: SPIE OPTO, 2021, Online Only
Abstract
Zincoxide is a rather new material system and promising candidate for mid-infrared (mir) and THz optoelectronic devices like quantum cascade lasers (QCLs) and detectors (QCDs) due to its twice as high LO-phonon energy as GaAs. The non-polar m-plane orientation allows designing and realizing such complex devices without internal electrical fields. We present the full fabrication scheme of such QCL/QCD devices including novel optimized etching techniques, surface leakage current suppression by multiple orders of magnitude and low resistance Ohmic contacts (~10^(-5) Ohm x cm^2). Optimized fabrication schemes resulted in fabrication yielding up to more than 80% of operational devices.
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Borislav Hinkov, Hanh T. Hoang, Daniela Ristanic, Maxime Hugues, Jean-Michel Chauveau, and Gottfried Strasser "Fabrication and surface-leakage suppression in (non-polar) m-Zn(Mg)O optoelectronic devices", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 1168715 (5 March 2021); https://doi.org/10.1117/12.2584830
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KEYWORDS
Optoelectronic devices
Etching
Quantum cascade lasers
Heterojunctions
Mid-IR
Resistance
Sensors
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