Presentation
5 March 2021 Tunable index silicon nitride for CMOS photonics applications
Author Affiliations +
Abstract
We are demonstrating the use of Low temperature PECVD silicon nitride based materials used for applications ranging from non-linear functionalities in the C band, wavelength division multiplexing in the O band and post fabrication light based refractive index tuning for in-situ device trimming. These materials are demonstrated for waveguide ranging from 300 nm up to 1 micron in thickness with refractive indices varying between 1.9 and 2.55.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frederic Y. Gardes, Thalía Domínguez Bucio, Lorenzo Mastronardi, Greta De Paoli, Senta L. Jantzen, Ilias Skandalos, Milan M. Milosevic, Valerio Vitali, Joaquin Faneca, Periklis Petropoulos, Francisco Jurado Romero, José Manuel Luque-González, Iñigo Molina-Fernández, Robert Halir, Alejandro Ortega-Moñux, J. G. Wangüemert-Pérez, Daniele Melati, Jens H. Schmid, and Pavel Cheben "Tunable index silicon nitride for CMOS photonics applications", Proc. SPIE 11689, Integrated Optics: Devices, Materials, and Technologies XXV, 1168916 (5 March 2021); https://doi.org/10.1117/12.2578387
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KEYWORDS
Silicon

Photonics

Refractive index

Absorption

Waveguides

Polarization

Scattering

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