Frederic Y. Gardes,1 Thalía Domínguez Buciohttps://orcid.org/0000-0002-3664-1403,1 Lorenzo Mastronardi,1 Greta De Paoli,1 Senta L. Jantzen,2 Ilias Skandalos,1 Milan M. Milosevic,1 Valerio Vitali,1 Joaquin Faneca,1 Periklis Petropoulos,1 Francisco Jurado Romero,3 José Manuel Luque-González,3 Iñigo Molina-Fernández,3 Robert Halir,3 Alejandro Ortega-Moñux,3 J. G. Wangüemert-Pérez,3 Daniele Melati,4 Jens H. Schmid,4 Pavel Cheben4
1Univ. of Southampton (United Kingdom) 2Optoelectronics Research Ctr. (United Kingdom) 3Univ. de Málaga (Spain) 4National Research Council Canada (Canada)
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We are demonstrating the use of Low temperature PECVD silicon nitride based materials used for applications ranging from non-linear functionalities in the C band, wavelength division multiplexing in the O band and post fabrication light based refractive index tuning for in-situ device trimming. These materials are demonstrated for waveguide ranging from 300 nm up to 1 micron in thickness with refractive indices varying between 1.9 and 2.55.
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Frederic Y. Gardes, Thalía Domínguez Bucio, Lorenzo Mastronardi, Greta De Paoli, Senta L. Jantzen, Ilias Skandalos, Milan M. Milosevic, Valerio Vitali, Joaquin Faneca, Periklis Petropoulos, Francisco Jurado Romero, José Manuel Luque-González, Iñigo Molina-Fernández, Robert Halir, Alejandro Ortega-Moñux, J. G. Wangüemert-Pérez, Daniele Melati, Jens H. Schmid, Pavel Cheben, "Tunable index silicon nitride for CMOS photonics applications," Proc. SPIE 11689, Integrated Optics: Devices, Materials, and Technologies XXV, 1168916 (5 March 2021); https://doi.org/10.1117/12.2578387