GaN laser diodes for atom-cooling for quantum technologies

S. P. Najda; P. Perlin; T. Suski; S. Stanczyk; M. Leszczynski; D. Schiavon; T. Slight; S. Gwyn; S. Watson; A. Kelly; M. Knapp; M. Haji

doi:10.1117/12.2574799

5 March 2021 GaN laser diodes for atom-cooling for quantum technologies

S. P. Najda, P. Perlin, T. Suski, S. Stanczyk, M. Leszczynski, D. Schiavon, T. Slight, S. Gwyn, S. Watson, A. Kelly, M. Knapp, M. Haji

Author Affiliations +

Proceedings Volume 11702, Photonic Heat Engines: Science and Applications III; 117020V (2021) https://doi.org/10.1117/12.2574799
Event: SPIE OPTO, 2021, Online Only

Conference Poster

Abstract

Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the u.v. to the visible. We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for quantum sensors such as optical clocks and cold-atom interferometry systems. This includes the [5s₂S1/2-5p²P1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s² ¹S0-5p¹P1] cooling transition in neutral strontium clocks at 461 nm and the [5s²s1/2 – 6p²P3/2] transition in rubidium at 420 nm. Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.

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S. P. Najda, P. Perlin, T. Suski, S. Stanczyk, M. Leszczynski, D. Schiavon, T. Slight, S. Gwyn, S. Watson, A. Kelly, M. Knapp, and M. Haji "GaN laser diodes for atom-cooling for quantum technologies", Proc. SPIE 11702, Photonic Heat Engines: Science and Applications III, 117020V (5 March 2021); https://doi.org/10.1117/12.2574799

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