Can nonlinear optoelectronic CMOS VCSEL replace semiconductor diode-based VCSEL? Comparison of performance, integration, cost of manufacturing, and applications

James N. Pan

doi:10.1117/12.2572955

5 March 2021 Can nonlinear optoelectronic CMOS VCSEL replace semiconductor diode-based VCSEL? Comparison of performance, integration, cost of manufacturing, and applications

James N. Pan

Author Affiliations +

Proceedings Volume 11704, Vertical-Cavity Surface-Emitting Lasers XXV; 117040K (2021) https://doi.org/10.1117/12.2572955
Event: SPIE OPTO, 2021, Online Only

Abstract

A photonic MOSFET includes an MOS field effect transistor, a VCSEL in the drain region, and a photon sensor or avalanche photo diode (APD) in the channel / well regions of the MOSFET. The MOSFET, VCSEL, and APD are fabricated as one integral transistor. When a voltage is applied to the drain, and a voltage is applied to the gate, both MOSFET and VCSEL are on (VCSEL is forward biased). Light from the VCSEL is absorbed by the APD (which is reversed biased) that triggered avalanche breakdown. A large breakdown current flows into the drain. When the MOSFET is switched off, VCSEL and APD are also turned off. Nonlinear optical films are fabricated in the substrate and isolation regions. In the paper we will discuss how to achieve better thermal stability with the embedded field effective devices (MOSFET and avalanche breakdown device), output power efficiency, integration of multiple wavelength arrays for optical signal processing, VCSEL-based nonlinear optical operations, and Ultra Large Scale Integration with VCSEL for optical computing.

Conference Presentation

Citation Download Citation

James N. Pan "Can nonlinear optoelectronic CMOS VCSEL replace semiconductor diode-based VCSEL? Comparison of performance, integration, cost of manufacturing, and applications", Proc. SPIE 11704, Vertical-Cavity Surface-Emitting Lasers XXV, 117040K (5 March 2021); https://doi.org/10.1117/12.2572955

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