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5 March 2021 Sub-MHz linewidth distributed feedback laser at 780.24-nm emission wavelength for 87Rb applications
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Abstract
A GaAs/AlGaAs distributed feedback semiconductor (DFB) laser with a laterally-coupled grating is demonstrated at a wavelength of 780.24 nm with an output power up to 60 mW. A mode expander and aluminum-free active layers have been used in the material epilayer to reduce the linewidth to 612 kHz while maintaining high output power. The fabricated laser demonstrates over 40 dB side-mode suppression ratio with tuning range > 0.3 nm, which is suitable for atom cooling experiments with the D2 87Rb atomic transition and provides substantial potential for the laser to be integrated into miniaturized cold atom systems.
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© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugenio Di Gaetano, Scott Watson, Euan McBrearty, Marc Sorel, and Douglas J. Paul "Sub-MHz linewidth distributed feedback laser at 780.24-nm emission wavelength for 87Rb applications", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050P (5 March 2021); https://doi.org/10.1117/12.2582524
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