The light-emitting layer was formed on the side of the nano-sized rod that had been formed by the nanomold process, and the InGaN/GaN MQWs and barrier layers were also fabricated. Through the design and growth of such an emission structure, it was possible to form a light-emitting layer on the side of the nano-sized rod. The change of the light emission wavelength was measured for each pitch of the nano-sized rods. A change of the emission wavelength with the pitch of the nano-sized rods suggests that two or more emission wavelengths can be realized in a single device. This wavelength variability, based on the arrangement of the nano-sized rods, shows that a white LED can be fabricated that does not require phosphor material to be applied. Based on these results, the semiconductor light source using a nanosized rod structure can be applied to various fields, such as flat or flexible displays and smart lighting.
|