Uncooled, high-power, highly linear InGaAs photodiodes for Ku-band applications

Shubhashish Datta; Abhay M. Joshi

doi:10.1117/12.2587747

12 April 2021 Uncooled, high-power, highly linear InGaAs photodiodes for Ku-band applications

Shubhashish Datta, Abhay M. Joshi

Proceedings Volume 11742, Radar Sensor Technology XXV; 117420U (2021) https://doi.org/10.1117/12.2587747
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

Abstract

We present uncooled, fiber-coupled InGaAs photodiode modules for DC to 18 GHz applications that generate broadband linear RF signal with peak-to-peak output amplitude up to 4 Vpp and phase nonlinearity, i.e. power-to-phase conversion factor <6 rad/W. The photodiode’s phase nonlinearity approaches zero for selected operating conditions, as needed for generating precision clocks. The photodiodes demonstrate reliable operation up to a DC photocurrent of 50 mA at 9 V reverse bias at ambient room temperature of 20 °C with passive heat sinking. The photodiodes are packaged in miniature, fiber-pigtailed modules having a size, weight, and power (SWaP) that is suitable for phased array systems.

Citation Download Citation

Shubhashish Datta and Abhay M. Joshi "Uncooled, high-power, highly linear InGaAs photodiodes for Ku-band applications", Proc. SPIE 11742, Radar Sensor Technology XXV, 117420U (12 April 2021); https://doi.org/10.1117/12.2587747

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