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27 March 2021 Miniaturization of NIR/SWIR image sensors enabled by thin-film photodiode monolithic integration
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Abstract
In this paper, we present short-wave infrared (SWIR) image sensors with high pixel density. Quantum dot (QD) photodiode stack is monolithically integrated on custom, 130 nm node CMOS readout circuit. State-of-the-art pixel pitch of 1.82 μm is demonstrated in focal plane arrays sensitive at eye-safe region above 1400 nm wavelength. Thin-film photodiode (TFPD) technology will facilitate realization of ultra-compact SWIR sensors for future XR applications, including eye-safe tracking systems and enhanced vision.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pawel E. Malinowski, Jiwon Lee, Yunlong Li, Epimitheas Georgitzikis, Vladimir Pejovic, Itai Lieberman, Tom Verschooten, Steven Thijs, Orges Furxhi, Paul Heremans, and David Cheyns "Miniaturization of NIR/SWIR image sensors enabled by thin-film photodiode monolithic integration", Proc. SPIE 11765, Optical Architectures for Displays and Sensing in Augmented, Virtual, and Mixed Reality (AR, VR, MR) II, 117650V (27 March 2021); https://doi.org/10.1117/12.2584144
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