Space coherence effect of 1.3µm InGaAsP/InP DCC structure semiconductor laser

Liu Yi-Chun; Dina Tie-Nan; Zhang Yue--Qing

doi:10.1117/12.963342

5 January 1990 Space coherence effect of 1.3µm InGaAsP/InP DCC structure semiconductor laser

Liu Yi-Chun, Dina Tie-Nan, Zhang Yue--Qing

Proceedings Volume 1177, Integrated Optics and Optoelectronics; (1990) https://doi.org/10.1117/12.963342
Event: OE/FIBERS '89, 1989, Boston, United States

Abstract

Far-Field pattern of 1.3µm InGaAsP/InP DCC structure semiconductor laser is calculated by the strong coupling method. Experimental data agree with the theorticat results with the FAHP beam divergence 0 i < 300. Space coherence characteristic of 1.3pm InGaAsP/InP DCC structure semiconductor laser is good. The impeltent action of the 1st active layer and the selection mode action of the 2nd active layer F-P cavity are analyzed for DCC structure laser.

Citation Download Citation

Liu Yi-Chun, Dina Tie-Nan, and Zhang Yue--Qing "Space coherence effect of 1.3µm InGaAsP/InP DCC structure semiconductor laser", Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); https://doi.org/10.1117/12.963342

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